PART |
Description |
Maker |
744305022 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744307012 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744307016 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744308020 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744302015 |
POWER-CHOKE WE-HCM-75
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744302007 |
POWER-CHOKE WE-HCM-75
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744309033 |
POWER-CHOKE WE-HCM 1390
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
744309047 |
POWER-CHOKE WE-HCM 1390
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
SUD50P06-15L |
P-Channel, Tj = 175 °C power MOSFET; low leakage current; P通道,Tj=175℃,低漏电流 P-Channel 60-V (D-S), 175C MOSFET P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
SRR1280-391K SRR1280-102K SRR1280-2R4Y |
SMD SHIELDED POWER CHOKE-LEAD FREE 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD SMD SHIELDED POWER CHOKE-LEAD FREE 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHOKE, POWER, SHIELDED, 2.5UH; Inductor type:Shielded Power Choke; Inductance:2.5uH; Tolerance, inductance: /-30%; Resistance:10mR; Current, DC max:9.2A; Frequency, resonant:45.0MHz; Case style:SMD Shielded; Q factor:20; Material, RoHS Compliant: Yes
|
Bourns, Inc. BOURNS INC
|
SUD50N02-06P |
N-Channel MOSFET, 20 V(D-S) , 175°C N-Channel MOSFET, 20 V(D-S) , 175°C N沟道MOSFET0V(D-S),175 From old datasheet system N-Channel 20-V (D-S) 175?MOSFET N-Channel 20-V (D-S) 175掳 MOSFET N-Channel 20-V (D-S) 175?MOSFET
|
Vishay Intertechnology,Inc. Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
HMC616LP310 616LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz 175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation Hittite Microwave Corpo...
|